Toshiba Semiconductor and Storage

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  • -3db Bandwidth
  • Access Time
  • Approval Agency
  • Capacitance @ Vr, F
  • Channel Capacitance (CS(off), CD(off))
  • Channel-to-Channel Matching (ΔRon)
  • Charge Injection
  • Circuit
  • Clock Frequency
  • Common Mode Transient Immunity (Min)
  • Crosstalk
  • Current - Average Rectified (Io)
  • Current - Collector (Ic) (Max)
  • Current - Collector Cutoff (Max)
  • Current - Continuous Drain (Id) @ 25°C
  • Current - DC Forward (If) (Max)
  • Current - Leakage (IS(off)) (Max)
  • Current - Max
  • Current - Output / Channel
  • Current - Output High, Low
  • Current - Peak Output
  • Current - Quiescent (Max)
  • Current - Reverse Leakage @ Vr
  • Current Transfer Ratio (Max)
  • Current Transfer Ratio (Min)
  • Data Rate
  • DC Current Gain (hFE) (Min) @ Ic, Vce
  • Drain to Source Voltage (Vdss)
  • Drive Voltage (Max Rds On, Min Rds On)
  • Features
  • FET Feature
  • FET Type
  • Form Factor
  • Frequency - Transition
  • Gate Charge (Qg) (Max) @ Vgs
  • Grade
  • Input Capacitance (Ciss) (Max) @ Vds
  • Input Logic Level - High
  • Input Logic Level - Low
  • Input Type
  • Inputs - Side 1/Side 2
  • Load Current
  • Logic Type
  • Max Propagation Delay @ V, Max CL
  • Memory Format
  • Memory Interface
  • Memory Organization
  • Memory Size
  • Memory Type
  • Mounting Type
  • Multiplexer/Demultiplexer Circuit
  • Number of Bits per Element
  • Number of Channels
  • Number of Circuits
  • Number of Elements
  • Number of Inputs
  • On-State Resistance (Max)
  • Operating Temperature
  • Operating Temperature - Junction
  • Output Type
  • Package
  • Package / Case
  • Power - Max
  • Power Dissipation (Max)
  • Product Status
  • Propagation Delay tpLH / tpHL (Max)
  • Pulse Width Distortion (Max)
  • Qualification
  • Rds On (Max) @ Id, Vgs
  • Resistor - Base (R1)
  • Resistor - Emitter Base (R2)
  • Reverse Recovery Time (trr)
  • Rise / Fall Time (Typ)
  • Series
  • Size / Dimension
  • Speed
  • Speed - Read
  • Speed - Write
  • Supplier Device Package
  • Switch Circuit
  • Switch Time (Ton, Toff) (Max)
  • Technology
  • Termination Style
  • Transistor Type
  • Turn On / Turn Off Time (Typ)
  • Type
  • Vce Saturation (Max)
  • Vce Saturation (Max) @ Ib, Ic
  • Vgs (Max)
  • Vgs(th) (Max) @ Id
  • Voltage - Collector Emitter Breakdown (Max)
  • Voltage - DC Reverse (Vr) (Max)
  • Voltage - Forward (Vf) (Max) @ If
  • Voltage - Forward (Vf) (Typ)
  • Voltage - Input
  • Voltage - Isolation
  • Voltage - Load
  • Voltage - Output (Max)
  • Voltage - Output Supply
  • Voltage - Supply
  • Voltage - Supply, Dual (V±)
  • Voltage - Supply, Single (V+)
  • Weight
  • Write Cycle Time - Word, Page
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Toshiba Semiconductor and Storage is a global leader in the development and manufacturing of semiconductor and storage solutions, boasting a rich history of innovation and technological excellence. Toshiba''s vast product lineup serves a multitude of industries, including automotive, telecommunications, consumer electronics, and industrial systems.

Their semiconductor offerings encompass a broad range of devices, such as microcontrollers, power devices, memory products, and sensors, designed to deliver high performance, energy efficiency, and reliability. Toshiba''s storage solutions, including HDDs and SSDs, are renowned for their superior speed, capacity, and durability, addressing the data storage needs of contemporary applications.

With a steadfast commitment to quality and innovation, Toshiba Semiconductor and Storage continuously invests in research and development to pioneer cutting-edge technologies. Their dedication to environmental sustainability and customer satisfaction further cements their position as a trusted industry leader.