Toshiba Semiconductor and Storage

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  • -3db Bandwidth
  • Accuracy
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  • Bidirectional Channels
  • Capacitance @ Frequency
  • Capacitance @ Vr, F
  • Channel Capacitance (CS(off), CD(off))
  • Channel-to-Channel Matching (ΔRon)
  • Charge Injection
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  • Common Mode Transient Immunity (Min)
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  • Current - Average Rectified (Io) (per Diode)
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  • Current - Continuous Drain (Id) @ 25°C
  • Current - DC Forward (If) (Max)
  • Current - Drain (Idss) @ Vds (Vgs=0)
  • Current - Leakage (IS(off)) (Max)
  • Current - Max
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  • Current - Quiescent (Max)
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  • Current Drain (Id) - Max
  • Current Transfer Ratio (Max)
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  • DC Current Gain (hFE) (Min) @ Ic, Vce
  • Delay Time - Propagation
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  • Drain to Source Voltage (Vdss)
  • Drive Voltage (Max Rds On, Min Rds On)
  • Fault Protection
  • Features
  • FET Feature
  • FET Type
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  • Frequency - Transition
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  • Gate Charge (Qg) (Max) @ Vgs
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  • Input Capacitance (Ciss) (Max) @ Vds
  • Input Logic Level - High
  • Input Logic Level - Low
  • Input Type
  • Inputs - Side 1/Side 2
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  • Max Propagation Delay @ V, Max CL
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  • Number of Regulators
  • On-State Resistance (Max)
  • Operating Temperature
  • Operating Temperature - Junction
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  • Power - Peak Pulse
  • Power Dissipation (Max)
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  • Propagation Delay tpLH / tpHL (Max)
  • Protection Features
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  • Pulse Width Distortion (Max)
  • Qualification
  • Ratio - Input
  • Rds On (Max) @ Id, Vgs
  • Rds On (Typ)
  • Resistance - RDS(On)
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  • Resistor - Emitter Base (R2)
  • Reverse Recovery Time (trr)
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  • Switch Time (Ton, Toff) (Max)
  • Switch Type
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  • Termination Style
  • Transistor Type
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  • Turn On / Turn Off Time (Typ)
  • Type
  • Unidirectional Channels
  • Vce Saturation (Max)
  • Vce Saturation (Max) @ Ib, Ic
  • Vgs (Max)
  • Vgs(th) (Max) @ Id
  • Voltage - Breakdown (Min)
  • Voltage - Breakdown (V(BR)GSS)
  • Voltage - Clamping (Max) @ Ipp
  • Voltage - Collector Emitter Breakdown (Max)
  • Voltage - Cutoff (VGS off) @ Id
  • Voltage - DC Reverse (Vr) (Max)
  • Voltage - Forward (Vf) (Max) @ If
  • Voltage - Forward (Vf) (Typ)
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  • Voltage - Supply, Dual (V±)
  • Voltage - Supply, Single (V+)
  • Voltage Dropout (Max)
  • Voltage Supply Source
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Toshiba Semiconductor and Storage is a global leader in the development and manufacturing of semiconductor and storage solutions, boasting a rich history of innovation and technological excellence. Toshiba''s vast product lineup serves a multitude of industries, including automotive, telecommunications, consumer electronics, and industrial systems.

Their semiconductor offerings encompass a broad range of devices, such as microcontrollers, power devices, memory products, and sensors, designed to deliver high performance, energy efficiency, and reliability. Toshiba''s storage solutions, including HDDs and SSDs, are renowned for their superior speed, capacity, and durability, addressing the data storage needs of contemporary applications.

With a steadfast commitment to quality and innovation, Toshiba Semiconductor and Storage continuously invests in research and development to pioneer cutting-edge technologies. Their dedication to environmental sustainability and customer satisfaction further cements their position as a trusted industry leader.

2SD1223(TE16L1,NQ)

TRANS NPN DARL 80V 4A PW-MOLD

2SK209-GR(TE85L,F)

JFET N-CH 50V 14MA SC59

74HC14D

IC INVERT SCHMITT 6CH 1IN 14SOIC

74HC165D

IC 8BIT SHIFT REGISTER 16SOIC

74HC259D

IC 8BIT ADDRESSABLE LATCH 16SOIC

74HC32D

IC GATE OR 4CH 2-INP 14SOIC