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- -3db Bandwidth
- Applications
- Bidirectional Channels
- Capacitance @ Frequency
- Capacitance @ Vr, F
- Channel Capacitance (CS(off), CD(off))
- Channel Type
- Channels per Circuit
- Channel-to-Channel Matching (ΔRon)
- Charge Injection
- Circuit
- Configuration
- Count Rate
- Crosstalk
- Current - Average Rectified (Io)
- Current - Average Rectified (Io) (per Diode)
- Current - Cathode
- Current - Collector (Ic) (Max)
- Current - Collector Cutoff (Max)
- Current - Continuous Drain (Id) @ 25°C
- Current - Leakage (IS(off)) (Max)
- Current - Output
- Current - Output High, Low
- Current - Peak Pulse (10/1000µs)
- Current - Quiescent (Max)
- Current - Reverse Leakage @ Vr
- Current - Supply
- Data Rate
- DC Current Gain (hFE) (Min) @ Ic, Vce
- Delay Time - Propagation
- Diode Configuration
- Direction
- Drain to Source Voltage (Vdss)
- Drive Voltage (Max Rds On, Min Rds On)
- Features
- FET Feature
- FET Type
- Frequency - Transition
- Function
- Gate Charge (Qg) (Max) @ Vgs
- Grade
- Impedance (Max) (Zzt)
- Independent Circuits
- Input Capacitance (Ciss) (Max) @ Vds
- Input Logic Level - High
- Input Logic Level - Low
- Input Signal
- Input Type
- Logic Type
- Max Propagation Delay @ V, Max CL
- Mounting Type
- Multiplexer/Demultiplexer Circuit
- Noise - 0.1Hz to 10Hz
- Noise - 10Hz to 10kHz
- Number of Bits per Element
- Number of Circuits
- Number of Elements
- Number of Inputs
- On-State Resistance (Max)
- Operating Temperature
- Operating Temperature - Junction
- Output Signal
- Output Type
- Package
- Package / Case
- Power - Max
- Power - Peak Pulse
- Power Dissipation (Max)
- Power Line Protection
- Product Status
- Qualification
- Rds On (Max) @ Id, Vgs
- Reference Type
- Reset
- Resistor - Base (R1)
- Resistor - Emitter Base (R2)
- Reverse Recovery Time (trr)
- Schmitt Trigger Input
- Series
- Speed
- Supplier Device Package
- Switch Circuit
- Switch Time (Ton, Toff) (Max)
- Technology
- Temperature Coefficient
- Timing
- Tolerance
- Transistor Type
- Translator Type
- Trigger Type
- Type
- Unidirectional Channels
- Vce Saturation (Max) @ Ib, Ic
- Vgs (Max)
- Vgs(th) (Max) @ Id
- Voltage - Breakdown (Min)
- Voltage - Clamping (Max) @ Ipp
- Voltage - Collector Emitter Breakdown (Max)
- Voltage - DC Reverse (Vr) (Max)
- Voltage - Forward (Vf) (Max) @ If
- Voltage - Input
- Voltage - Output (Max)
- Voltage - Output (Min/Fixed)
- Voltage - Reverse Standoff (Typ)
- Voltage - Supply
- Voltage - Supply, Dual (V±)
- Voltage - Supply, Single (V+)
- Voltage - VCCA
- Voltage - VCCB
- Voltage - Zener (Nom) (Vz)
- Voltage Supply Source
Nexperia USA Inc. is a prominent semiconductor manufacturer, specializing in producing discrete and power-logic devices. Established from a long legacy of innovation, Nexperia combines expertise and cutting-edge technology to deliver efficient and reliable semiconductor components. Their products are widely used across automotive, industrial, and consumer electronics sectors.
Nexperia’s robust portfolio includes components such as diodes, transistors, and ESD protection devices, all designed to optimize performance and efficiency. These products are critical for enabling and enhancing the functionality of various electronic devices and systems.
The company’s focus on sustainability and operational excellence ensures high-quality production with minimized environmental impact. Nexperia USA Inc.’s commitment to innovation and customer satisfaction cements its status as a leading force in the semiconductor industry.
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