Picture of TSM500P02DCQ RFG

TSM500P02DCQ RFG

Taiwan Semiconductor

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Products specifications

Attribute name	Attribute value
Series	-
Package	Tape & Reel (TR);Cut Tape (CT)
Product Status	Active
Technology	MOSFET (Metal Oxide)
Configuration	2 P-Channel (Dual)
FET Feature	-
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	4.7A (Tc)
Rds On (Max) @ Id, Vgs	50mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id	800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs	9.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	1230pF @ 10V
Power - Max	620mW
Operating Temperature	-50°C ~ 150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Surface Mount
Package / Case	6-VDFN Exposed Pad
Supplier Device Package	6-TDFN (2x2)

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