Picture of RN2114(TE85L,F)

RN2114(TE85L,F)

Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V 0.1A SSM

RN2114(TE85L,F) Datasheet

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Products specifications

Attribute name	Attribute value
Series	-
Package	Tape & Reel (TR);Cut Tape (CT)
Product Status	Active
Transistor Type	PNP - Pre-Biased
Current - Collector (Ic) (Max)	100 mA
Voltage - Collector Emitter Breakdown (Max)	50 V
Resistor - Base (R1)	1 kOhms
Resistor - Emitter Base (R2)	10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce	50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic	300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)	500nA
Frequency - Transition	200 MHz
Power - Max	100 mW
Grade	-
Qualification	-
Mounting Type	Surface Mount
Package / Case	SC-75, SOT-416
Supplier Device Package	SSM

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