Cree/Wolfspeed

Sort by
Display per page
View as
Filter by attributes
  • Current - Average Rectified (Io) (per Diode)
  • Current - Continuous Drain (Id) @ 25°C
  • Current - Reverse Leakage @ Vr
  • Diode Configuration
  • Drain to Source Voltage (Vdss)
  • Drive Voltage (Max Rds On, Min Rds On)
  • FET Feature
  • FET Type
  • Gate Charge (Qg) (Max) @ Vgs
  • Grade
  • Input Capacitance (Ciss) (Max) @ Vds
  • Mounting Type
  • Operating Temperature
  • Operating Temperature - Junction
  • Package
  • Package / Case
  • Power Dissipation (Max)
  • Product Status
  • Qualification
  • Rds On (Max) @ Id, Vgs
  • Reverse Recovery Time (trr)
  • Speed
  • Supplier Device Package
  • Technology
  • Vgs (Max)
  • Vgs(th) (Max) @ Id
  • Voltage - DC Reverse (Vr) (Max)
  • Voltage - Forward (Vf) (Max) @ If
Categories
Manufacturers
Recently viewed products

Cree/Wolfspeed is at the forefront of silicon carbide (SiC) and gallium nitride (GaN) technologies, driving advancements in power and RF applications. As a segment of Cree Inc., Wolfspeed focuses on delivering high-efficiency solutions that enhance performance and energy efficiency in demanding environments.

Wolfspeed''s SiC and GaN components are designed for use in a range of applications, including electric vehicles, renewable energy systems, and telecommunications infrastructure. These advanced materials enable superior high-frequency performance, lower energy losses, and more compact design solutions.

With a commitment to innovation and quality, Cree/Wolfspeed continues to push the boundaries of what''s possible in power and RF technology. Their cutting-edge products and dedicated engineering support make them an invaluable partner for industries seeking the next generation of efficient and high-performance semiconductor solutions.