Picture of US6M2TR

US6M2TR

Rohm Semiconductor

MOSFET N/P-CH 30V/20V 1.5A TUMT6

US6M2TR Datasheet

$

Bulk RFQ

Bulk BID

Products specifications

Attribute name	Attribute value
Series	-
Package	Tape & Reel (TR);Cut Tape (CT)
Product Status	Active
Technology	MOSFET (Metal Oxide)
Configuration	N and P-Channel
FET Feature	-
Drain to Source Voltage (Vdss)	30V, 20V
Current - Continuous Drain (Id) @ 25°C	1.5A, 1A
Rds On (Max) @ Id, Vgs	240mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	2.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	80pF @ 10V
Power - Max	1W
Operating Temperature	150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Surface Mount
Package / Case	6-SMD, Flat Leads
Supplier Device Package	TUMT6

Year