Picture of TC6320TG-G

TC6320TG-G

Microchip Technology

MOSFET N/P-CH 200V 8SOIC

TC6320TG-G Datasheet

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Products specifications

Attribute name	Attribute value
Series	-
Package	Tape & Reel (TR);Cut Tape (CT)
Product Status	Active
Technology	MOSFET (Metal Oxide)
Configuration	N and P-Channel
FET Feature	-
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25°C	-
Rds On (Max) @ Id, Vgs	7Ohm @ 1A, 10V
Vgs(th) (Max) @ Id	2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	-
Input Capacitance (Ciss) (Max) @ Vds	110pF @ 25V, 125pF @ 25V
Power - Max	-
Operating Temperature	-55°C ~ 150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package	8-SOIC

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