Picture of STQ2LN60K3-AP

STQ2LN60K3-AP

STMicroelectronics

MOSFET N-CH 600V 600MA TO92-3

STQ2LN60K3-AP Datasheet

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Products specifications

Attribute name	Attribute value
Package	Cut Tape (CT);Tape & Box (TB)
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	600mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	4.5Ohm @ 1A, 10V
Vgs(th) (Max) @ Id	4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs	12 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	235 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	2.5W (Tc)
Operating Temperature	150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Through Hole
Supplier Device Package	TO-92-3
Package / Case	TO-226-3, TO-92-3 (TO-226AA) Formed Leads

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