Picture of STB30N65DM6AG

STB30N65DM6AG

STMicroelectronics

AUTOMOTIVE-GRADE N-CHANNEL 650 V

STB30N65DM6AG Datasheet

$

Bulk RFQ

Bulk BID

Products specifications

Attribute name	Attribute value
Package	Tape & Reel (TR);Cut Tape (CT)
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	28A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	115mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	4.75V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	46 nC @ 10 V
Vgs (Max)	±25V
Input Capacitance (Ciss) (Max) @ Vds	2000 pF @ 100 V
FET Feature	-
Power Dissipation (Max)	223W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Grade	Automotive
Qualification	AEC-Q101
Mounting Type	Surface Mount
Supplier Device Package	TO-263 (D2PAK)
Package / Case	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Year