Picture of SSM3K35AMFV,L3F

SSM3K35AMFV,L3F

Toshiba Semiconductor and Storage

MOSFET N-CH 20V 250MA VESM

SSM3K35AMFV,L3F Datasheet

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Products specifications

Attribute name	Attribute value
Package	Tape & Reel (TR);Cut Tape (CT)
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	250mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.2V, 4.5V
Rds On (Max) @ Id, Vgs	1.1Ohm @ 150mA, 4.5V
Vgs(th) (Max) @ Id	1V @ 100µA
Gate Charge (Qg) (Max) @ Vgs	0.34 nC @ 4.5 V
Vgs (Max)	±10V
Input Capacitance (Ciss) (Max) @ Vds	36 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	500mW (Ta)
Operating Temperature	150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Surface Mount
Supplier Device Package	VESM
Package / Case	SOT-723

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