Picture of SI6463DQ

SI6463DQ

Fairchild Semiconductor

P-CHANNEL MOSFET

SI6463DQ Datasheet

$

Bulk RFQ

Bulk BID

Products specifications

Attribute name	Attribute value
Package	Bulk
Product Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	8.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Rds On (Max) @ Id, Vgs	12.5mOhm @ 8.8A, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	66 nC @ 4.5 V
Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	5045 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	600mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Surface Mount
Supplier Device Package	8-TSSOP
Package / Case	8-TSSOP (0.173\

Year