Picture of SCT3160KLGC11

SCT3160KLGC11

Rohm Semiconductor

SICFET N-CH 1200V 17A TO247N

SCT3160KLGC11 Datasheet

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Products specifications

Attribute name	Attribute value
Series	-
Package	Tube
Product Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1200 V
Current - Continuous Drain (Id) @ 25°C	17A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	18V
Rds On (Max) @ Id, Vgs	208mOhm @ 5A, 18V
Vgs(th) (Max) @ Id	5.6V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs	42 nC @ 18 V
Vgs (Max)	+22V, -4V
Input Capacitance (Ciss) (Max) @ Vds	398 pF @ 800 V
FET Feature	-
Power Dissipation (Max)	103W (Tc)
Operating Temperature	175°C (TJ)
Grade	-
Qualification	-
Mounting Type	Through Hole
Supplier Device Package	TO-247N
Package / Case	TO-247-3

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