Picture of SCT3030KLGC11

SCT3030KLGC11

Rohm Semiconductor

SICFET N-CH 1200V 72A TO247N

SCT3030KLGC11 Datasheet

$

Bulk RFQ

Bulk BID

Products specifications

Attribute name	Attribute value
Series	-
Package	Tube
Product Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1200 V
Current - Continuous Drain (Id) @ 25°C	72A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	18V
Rds On (Max) @ Id, Vgs	39mOhm @ 27A, 18V
Vgs(th) (Max) @ Id	5.6V @ 13.3mA
Gate Charge (Qg) (Max) @ Vgs	131 nC @ 18 V
Vgs (Max)	+22V, -4V
Input Capacitance (Ciss) (Max) @ Vds	2222 pF @ 800 V
FET Feature	-
Power Dissipation (Max)	339W (Tc)
Operating Temperature	175°C (TJ)
Grade	-
Qualification	-
Mounting Type	Through Hole
Supplier Device Package	TO-247N
Package / Case	TO-247-3

Year