Picture of PHT6NQ10T,135

PHT6NQ10T,135

Nexperia USA Inc.

MOSFET N-CH 100V 3A SOT223

PHT6NQ10T,135 Datasheet

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Products specifications

Attribute name	Attribute value
Package	Tape & Reel (TR);Cut Tape (CT)
Product Status	Not For New Designs
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	90mOhm @ 3A, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	21 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	633 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	1.8W (Ta), 8.3W (Tc)
Operating Temperature	-65°C ~ 150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Surface Mount
Supplier Device Package	SOT-223
Package / Case	TO-261-4, TO-261AA

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