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MSC035SMA170S

Microchip Technology

MOSFET SIC 1700V 35 MOHM TO-268

MSC035SMA170S Datasheet

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Products specifications

Attribute name	Attribute value
Series	-
Package	Bulk
Product Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1700 V
Current - Continuous Drain (Id) @ 25°C	59A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	20V
Rds On (Max) @ Id, Vgs	45mOhm @ 30A, 20V
Vgs(th) (Max) @ Id	3.25V @ 2.5mA (Typ)
Gate Charge (Qg) (Max) @ Vgs	178 nC @ 20 V
Vgs (Max)	+23V, -10V
Input Capacitance (Ciss) (Max) @ Vds	3300 pF @ 1000 V
FET Feature	-
Power Dissipation (Max)	278W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Grade	-
Qualification	-
Mounting Type	Surface Mount
Supplier Device Package	D3PAK
Package / Case	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA

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