Picture of IXTA6N100D2

IXTA6N100D2

Littelfuse Inc.

MOSFET N-CH 1000V 6A TO263

IXTA6N100D2 Datasheet

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Products specifications

Attribute name	Attribute value
Package	Tube
Product Status	Active
FET Type	N-Channel, Depletion Mode
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	1000 V
Current - Continuous Drain (Id) @ 25°C	6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	2.2Ohm @ 3A, 0V
Vgs(th) (Max) @ Id	-
Gate Charge (Qg) (Max) @ Vgs	95 nC @ 5 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2650 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	300W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Surface Mount
Supplier Device Package	TO-263AA
Package / Case	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

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