IRFR9120NTRLPBF

Infineon Technologies

MOSFET P-CH 100V 6.6A DPAK

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Products specifications

Attribute name	Attribute value
Package	Tape & Reel (TR);Cut Tape (CT)
Product Status	Not For New Designs
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	6.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	480mOhm @ 3.9A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	27 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	350 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	40W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Surface Mount
Supplier Device Package	TO-252AA (DPAK)
Package / Case	TO-252-3, DPAK (2 Leads + Tab), SC-63

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