Picture of IRF7341TRPBF

IRF7341TRPBF

Infineon Technologies

MOSFET 2N-CH 55V 4.7A 8SO

IRF7341TRPBF Datasheet

$

Bulk RFQ

Bulk BID

Products specifications

Attribute name	Attribute value
Package	Tape & Reel (TR);Cut Tape (CT)
Product Status	Active
Technology	MOSFET (Metal Oxide)
Configuration	2 N-Channel (Dual)
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	55V
Current - Continuous Drain (Id) @ 25°C	4.7A
Rds On (Max) @ Id, Vgs	50mOhm @ 4.7A, 10V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	36nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	740pF @ 25V
Power - Max	2W
Operating Temperature	-55°C ~ 150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package	8-SO

Year