Picture of IRF7105PBF

IRF7105PBF

Infineon Technologies

MOSFET N/P-CH 25V 3.5A/2.3A 8SO

IRF7105PBF Datasheet

$

Bulk RFQ

Bulk BID

Products specifications

Attribute name	Attribute value
Package	Tube
Technology	MOSFET (Metal Oxide)
Configuration	N and P-Channel
FET Feature	-
Drain to Source Voltage (Vdss)	25V
Current - Continuous Drain (Id) @ 25°C	3.5A, 2.3A
Rds On (Max) @ Id, Vgs	100mOhm @ 1A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	27nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	330pF @ 15V
Power - Max	2W
Operating Temperature	-55°C ~ 150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package	8-SO

Year