IPD50N04S4L08ATMA1

Infineon Technologies

MOSFET N-CH 40V 50A TO252-3

Bulk RFQ

Products specifications

Attribute name	Attribute value
Package	Tape & Reel (TR);Cut Tape (CT)
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40 V
Current - Continuous Drain (Id) @ 25°C	50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	7.3mOhm @ 50A, 10V
Vgs(th) (Max) @ Id	2.2V @ 17µA
Gate Charge (Qg) (Max) @ Vgs	30 nC @ 10 V
Vgs (Max)	+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds	2340 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	46W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Grade	Automotive
Qualification	AEC-Q101
Mounting Type	Surface Mount
Supplier Device Package	PG-TO252-3-313
Package / Case	TO-252-3, DPAK (2 Leads + Tab), SC-63

Year

BROWSE CATEGORIES