C3M0065090J

Cree/Wolfspeed

Availability: In stock

Products specifications

Attribute name	Attribute value
Package	Tube
Product Status	Not For New Designs
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	900 V
Current - Continuous Drain (Id) @ 25°C	35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	15V
Rds On (Max) @ Id, Vgs	78mOhm @ 20A, 15V
Vgs(th) (Max) @ Id	3.5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs	30 nC @ 15 V
Vgs (Max)	+19V, -8V
Input Capacitance (Ciss) (Max) @ Vds	660 pF @ 600 V
FET Feature	-
Power Dissipation (Max)	113W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Surface Mount
Supplier Device Package	TO-263-7
Package / Case	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

Year

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