Picture of BSN20Q-7

BSN20Q-7

Diodes Incorporated

MOSFET N-CH 50V 500MA SOT23

BSN20Q-7 Datasheet

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Products specifications

Attribute name	Attribute value
Series	-
Package	Tape & Reel (TR);Cut Tape (CT)
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	50 V
Current - Continuous Drain (Id) @ 25°C	500mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	1.8Ohm @ 220mA, 10V
Vgs(th) (Max) @ Id	1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	0.8 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	40 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	600mW (Ta), 920mW (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Grade	Automotive
Qualification	AEC-Q101
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3
Package / Case	TO-236-3, SC-59, SOT-23-3

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