BSC112N06LDATMA1

Infineon Technologies

MOSFET 2N-CH 60V 20A 8TDSON

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Products specifications

Attribute name	Attribute value
Package	Tape & Reel (TR);Cut Tape (CT)
Product Status	Active
Technology	MOSFET (Metal Oxide)
Configuration	2 N-Channel (Dual)
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	20A (Tc)
Rds On (Max) @ Id, Vgs	11.2mOhm @ 17A, 10V
Vgs(th) (Max) @ Id	2.2V @ 28µA
Gate Charge (Qg) (Max) @ Vgs	55nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	4020pF @ 30V
Power - Max	65W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Grade	-
Qualification	-
Mounting Type	Surface Mount
Package / Case	8-PowerVDFN
Supplier Device Package	PG-TDSON-8-4

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