BSC059N04LS6ATMA1

Infineon Technologies

MOSFET N-CH 40V 17A TDSON

Bulk RFQ

Products specifications

Attribute name	Attribute value
Package	Tape & Reel (TR);Cut Tape (CT)
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40 V
Current - Continuous Drain (Id) @ 25°C	17A (Ta), 49A (Tc), 59A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	5.9mOhm @ 50A, 10V
Vgs(th) (Max) @ Id	2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	9.4 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	830 pF @ 20 V
FET Feature	-
Power Dissipation (Max)	3W (Ta), 38W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Grade	-
Qualification	-
Mounting Type	Surface Mount
Supplier Device Package	PG-TDSON-8-6
Package / Case	8-PowerTDFN

Year

BROWSE CATEGORIES