BSC042NE7NS3GATMA1

Infineon Technologies

MOSFET N-CH 75V 19A/100A TDSON

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Products specifications

Attribute name	Attribute value
Package	Tape & Reel (TR);Cut Tape (CT)
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	75 V
Current - Continuous Drain (Id) @ 25°C	19A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	4.2mOhm @ 50A, 10V
Vgs(th) (Max) @ Id	3.8V @ 91µA
Gate Charge (Qg) (Max) @ Vgs	69 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	4800 pF @ 37.5 V
FET Feature	-
Power Dissipation (Max)	2.5W (Ta), 125W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Surface Mount
Supplier Device Package	PG-TDSON-8-1
Package / Case	8-PowerTDFN

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