Picture of AOT66916L

AOT66916L

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 100V 35.5/120A TO220

AOT66916L Datasheet

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Products specifications

Attribute name	Attribute value
Package	Tube
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	35.5A (Ta), 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	3.6mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	78 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	6180 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	8.3W (Ta), 277W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Through Hole
Supplier Device Package	TO-220
Package / Case	TO-220-3

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