Picture of 2SD1223(TE16L1,NQ)

2SD1223(TE16L1,NQ)

Toshiba Semiconductor and Storage

TRANS NPN DARL 80V 4A PW-MOLD

2SD1223(TE16L1,NQ) Datasheet

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Products specifications

Attribute name	Attribute value
Series	-
Package	Tape & Reel (TR);Cut Tape (CT)
Product Status	Active
Transistor Type	NPN - Darlington
Current - Collector (Ic) (Max)	4 A
Voltage - Collector Emitter Breakdown (Max)	80 V
Vce Saturation (Max) @ Ib, Ic	1.5V @ 6mA, 3A
Current - Collector Cutoff (Max)	20µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	1000 @ 3A, 2V
Power - Max	1 W
Frequency - Transition	-
Operating Temperature	150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package	PW-MOLD

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