Picture of 2N7002NXAKR

2N7002NXAKR

Nexperia USA Inc.

MOSFET N-CH 60V 190MA TO236AB

2N7002NXAKR Datasheet

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Products specifications

Attribute name	Attribute value
Series	-
Package	Tape & Reel (TR);Cut Tape (CT)
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	190mA (Ta), 300mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)	5V, 10V
Rds On (Max) @ Id, Vgs	4.5Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id	2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	0.43 nC @ 4.5 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	20 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	265mW (Ta), 1.33W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Surface Mount
Supplier Device Package	TO-236AB
Package / Case	TO-236-3, SC-59, SOT-23-3

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