Picture of 1SS307(TE85L,F)

1SS307(TE85L,F)

Toshiba Semiconductor and Storage

DIODE GEN PURP 30V 100MA S-MINI

1SS307(TE85L,F) Datasheet

$

Bulk RFQ

Bulk BID

Products specifications

Attribute name	Attribute value
Series	-
Package	Tape & Reel (TR);Cut Tape (CT)
Product Status	Active
Technology	Standard
Voltage - DC Reverse (Vr) (Max)	30 V
Current - Average Rectified (Io)	100mA
Voltage - Forward (Vf) (Max) @ If	1.3 V @ 100 mA
Speed	Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr)	-
Current - Reverse Leakage @ Vr	10 nA @ 30 V
Capacitance @ Vr, F	6pF @ 0V, 1MHz
Grade	-
Qualification	-
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Supplier Device Package	S-Mini
Operating Temperature - Junction	125°C (Max)

Year